Thib ob - qib oxidation ntawm chip manidation: rau sai thermal oxidation

Nyob rau hauv nanoworld ntawm chip tsim, txhua tus neeg yeeb yaj kiab oxide yog lub hauv paus ntawm kev ua tau zoo ntawm transistor. Thaum tus txheej txheem nkag mus rau hauv lub sub- 7nm thermal oxidation, thaum kawg {}}} qib teb tau zoo thiab yog atomic-qib raug.

I. Dab tsi yog rto?

Millisecond - theem siab {1} Qhov tseeb ntawm ultra {2} Cov txheej txheem cua sov Qhov KubTiab Kub Ntau: 800-1100 Qib; Thickness tswj: 1-10 nm, qhov tseeb txog ± 0.01 nm.

Kev sib piv nrog cov pa rauve rauve oxidation:

Cov khoom siv hluav taws xob sib xyaw ua kom sov raj ntawm oxidation rto sai thermal oxidation

Lub Sij Hawm Cua Sov 30-60Txhua 5-10Seconds

Siv nyiaj kub siab (yooj yim los ua rau doping thiab kis) heev

Thickness uniformity ± 2% ± 0.5%

Interface tshuaj tsis zoo ntom 10¹¹ CM⁻² 10¹⁰ cm⁻².

Ii.Cov tub ntxhais lub luag haujlwm ntawm RTO: interface kev txhim kho

1. Tus khub zoo meej rau high- k tshaj tawm: Hauv HKMG cov txheej txheem hauv qab ntawm 0.5-1.2 NM kom ua tau zoo rau cov yam ntxwv ntawm HFO₂ thiab silicon; Qhov sib npaug oxide txheej txheej thickness (ot) tau txo rau 0.8 nm thiab cov xau dej tau raug txo los ntawm 100 zaug.

Peb lub {- didensional yoog raws li cov niaj hnub ua tiav ntawm lub fin (fin) kom zam dhau "ntug kev ua yeeb yam; Nyob rau hauv Intel's 14nm finfet, lub ro do rau tswj hwm qhov txawv ntawm sab saum toj ntawm lub fin los ntawm sab ntsa oxide txheej rau<0.1 nm.

Cov kev siv nyiaj thermal ntawm ultrashallow junction tom qab txhaj tshuaj atom {}} deg rov qab lub boron diffusion deb tsis pub dhau 2 nm.

4. Kev kho kho ntawm nanostructure Axygen (O *) ua rau muaj kev ncua ntawm lub xeev silicon, txo cov kev ncua ntawm lub xeev sillicon, txo cov kev ncua ntawv hauv xeev kom tsawg dua 10¹⁰ CMAN thiab nce cov neeg muaj peev xwm loj dua los ntawm 20%.

0010-20129 6 "tsis sib dhos sib dhos

III.Cov kev hloov pauv ntawm rto

Cov Khoom Sib Luag

SI (S) + O₂ (g) → sio₂ (s) (olygen oxidation)
Si (s) + 2 h₂o} → sio₂ (s)+ 2 h₂ (g) (ntub oxygen oxidation)

Peb {-} theem kev tshuaj xyuas cov txheej txheem
1. Kev pib tawm txoj kab kev loj hlob (0-2 nm):
Oxygen lwg me me tawm ncaj qha nrog silicon, thiab tus nqi yog tswj hwm los ntawm qhov chaw tiv thaiv kab txaij;

Rau txhua 100℃nce hauv qhov kub thiab txias, tus nqi loj hlob nce los ntawm 3 zaug.

Parabolic diffusion tswj (2-10 nm): oxygen at attract yuav tsum nkag rau cov txheej txheem sioect, thiab kev sib txawv vibents txiav txim tus nqi;

Tom qab cov neeg ua kam - groov greate qauv: tuab α lub sij hawm × diffusion coeffusic.

3. Interfored Kev Kho Dua Tshiab (tom qab oxidation): ntawm 1070 degree, silicon℃yog rearranged nyob rau hauv 0.1 vib nas this los tsim kev ntxhov siab {}} dawb interface; Qhov tso tawm hydrogen atoms passivate ib qho kev tshem tawm ntxiv lawm.

IV.Tag nrho cov txheej txheem ntawm RTO cov txheej txheem

Nqa cov oxidation oxidation ntawm 5 nm ntawm piv txwv:

1. Wafer PretreCTION HF3H2O Vapor tu kom tshem tawm cov thawj oxide txheej (tuab <0.2 nm); Argon Purge nrog kab noj hniav oxygen cov ntsiab lus <1 pm.

2. Cov cua sov sai sai no cov cua sov ua kom sov warray hluav taws kub ntawm 400℃rau 900℃hauv 3 vib nas this; Tiag - lub sij hawm tswv yim rau infrared kub ntsuas ntawm sab nraub qaum, ntsuas kub qhov tseeb ± 1 degree.

3. Oxidation Resions (Cov kauj ruam tseem ceeb)

Parameter teeb tus nqi muaj nuj nqi
Qhov kub 900℃sib npaug nrog kev loj hlob tus nqi nrog nyiaj txiag kub

Kho kom meej tswj ntawm thickness0.8-1.2 nm
Oxygen Flower Ua kom muaj kev ntseeg txaus txaus
Tswj siab rau txhim kho cov roj adsorption
4. Sai sai txias
Txias mus rau 600℃tsis pub dhau 0.5 vib nas this tom qab txiav lub hwj huam muab;
Helium backcooling tiv thaiv wafer warping.
5. Kev Soj Ntsuam Zoo
Ellipsometer ntsuas tuab (qhov tseeb ± 0.01 nm);